| PART |
Description |
Maker |
| CPA80A12AA4-12FC CPAT45A12AA4-12FC CPA250V2AA4-12F |
SILICON CONTROLLED SWITCH ADD-A-PAK
3 PHASE, 400 A, SILICON, RECTIFIER DIODE
SCR
3 PHASE, 1000 A, SILICON, RECTIFIER DIODE
|
|
| IRKD56 IRKD56_04A IRKD56_06A IRKD56_08A IRKD56_10A |
ADD-A-pak GEN V Power Modules 地址给柏V电源模块
ADD-A-pak GEN V Power Modules 地址给柏根V电源模块
Multiconductor Cable; Number of Conductors:2; Conductor Size AWG:16; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 地址给柏根V电源模块
(IRKJ56 / IRKJ71) ADD-A-pak GEN V Power Modules
800V Common Cathode in a ADD-A-Pak package
800V Doubler in a ADD-A-Pak package
800V Single Diode in a ADD-A-Pak package
1600V Common Cathode in a ADD-A-Pak package
1600V Doubler in a ADD-A-Pak package
1600V Single Diode in a ADD-A-Pak package
1600V Common Anode in a ADD-A-Pak package
1200V Common Cathode in a ADD-A-Pak package
1400V Common Cathode in a ADD-A-Pak package
1000V Common Cathode in a ADD-A-Pak package
800V Common Anode in a ADD-A-Pak package
1200V Doubler in a ADD-A-Pak package
1200V Single Diode in a ADD-A-Pak package
1000V Doubler in a ADD-A-Pak package
1200V Common Anode in a ADD-A-Pak package
1400V Doubler in a ADD-A-Pak package
1400V Single Diode in a ADD-A-Pak package
1400V Common Anode in a ADD-A-Pak package
1000V Single Diode in a ADD-A-Pak package
1000V Common Anode in a ADD-A-Pak package
ADD-A-pak GEN V Power Modules
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| BRY39 |
Programmable unijunction transistor/ Silicon controlled switch
|
NXP Semiconductors
Philips Semiconductors
|
| DS1982-F3 |
1-kbit Add-Only iButton 1千位只添加iButton
1-kbit Add-Only iButton 1K位只添加iButton®
|
Maxim Integrated Products, Inc.
|
| NTE314 |
12.5 A, 400 V, SCR, TO-3
Silicon Controlled Rectifier (SCR) Power Regulator Switch
|
NTE Electronics
|
| VSKC56 VSKC56-04 VSKC56-06 VSKC56-08 VSKC56-10 VSK |
ADD-A-PAK Generation VII Power Modules Standard Diodes, 60 A
60 A, 400 V, SILICON, RECTIFIER DIODE
|
Vishay Siliconix
http://
VISHAY SEMICONDUCTORS
|
| MCR08BT1 MCR08B MCR08MT1 MCR08BT1-D |
Sensiteve Gate Silicon Controlled Rectifier
Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
ONSEMI[ON Semiconductor]
|
| NTE5548 NTE5541 NTE5545 |
Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current 35A.
Silicon Controlled Rectifier (SCR) 35 Amp
|
NTE[NTE Electronics]
|
| MCR106-6G MCR106-8G MCR106-8 MCR106 MCR106-6 MCR10 |
Sensitive Gate Silicon Controlled Rectifier; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 4 A, 600 V, SCR, TO-225AA
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
ONSEMI[ON Semiconductor]
|
| MCR100-6RLRA MCR100-6RLRM MCR100-6RLRMG MCR100-6RL |
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 400 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 200 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 600 V, SCR, TO-92
|
ONSEMI[ON Semiconductor]
|
| MCR718 MCR718T4 MCR716T4 MCR716 |
Silicon Controlled Rectifier (Reverse Blocking Thyristors)
Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS)
Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 - 600 VOLTS)
|
ONSEMI[ON Semiconductor]
|
| 2N3896 2N3899 2N6171 2N6172 2N6173 2N6174 2N3870 2 |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 可控硅整流器（反向阻断三极晶闸管
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 35 A, 400 V, SCR, TO-203AA
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 35 A, 100 V, SCR, TO-203AA
(2N38xx) Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
